 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple-emitter site structure. Multiple-epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple-emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe-operation-area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications. Features: D Maximum Safe-Area-of-Operation D Low Saturation Voltages D High Voltage Rating: VCER(sus) = 375V D High Dissipation Rating: PT = 45W Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V Collector-Emitter Sustaining Voltage With Base Open, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V With Reverse Bias (VBE) of -1.5V, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V With External Base-Emitter Resistance (RBE) 50, VCER(sus) . . . . . . . . . . . . . . . . . . . 375V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Transistor Dissipation (TC +25C, VCE 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL . . . . . . . +230C Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RJC . . . . . . . . . . . . . . . . . 3.9C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector-Cutoff Current Symbol ICEV IEBO Test Conditions VCE = 450V, VBE = -1.5V VCE = 450V, VBE = -1.5V, TC = +125C Emitter-Cutoff Current Collector-Emitter Sustaining Voltage VBE = -9V, IC = 0 VCEO(sus) IC = 200mA, Note 1, Note 2 VCER(sus) IC = 200mA, RBE = 50, Note 1, Note 2 Emitter-Base Voltage DC Forward Current Base-Emitter Saturation Voltage VEBO hFE VBE(sat) VCE(sat) Cobo |hfe| IS/b ES/b td tr ts tf IC = 0 VCE = 1V, IC = 1.2A, Note 1 IC = 1.2A, IB = 200mA, Note 1 IC = 4A, IB = 800mA, Note 1 Collector-Emitter Saturation Voltage IC = 1.2A, IB = 200mA, Note 1 IC = 4A, IB = 800mA, Note 1 Output Capacitance Small-Signal Forward Current Transfer Ratio Second Breakdown Collector Current Second Breakdown Energy Delay Time Rise Time Storage Time Fall Time VCB = 10V, f = 1MHz VCE = 10V, IC = 200mA, f = 1MHz VCE = 50V, with Base forward biased, Pulse duration (non-repetitive) = 1sec VBE = -4V, IC = 3A, with Base reverse biased, RB = 50, L = 100H VCC = 250V, IB1 = IB2 = 200mA, IC = 1.2A Min - - - 350 375 9 12 - - - - - 1 0.9 0.45 - - - - Typ - - - - - - 28 1.0 1.3 0.15 0.5 - 7 - - 0.02 0.3 2.8 0.3 Max 0.5 5.0 1.0 - - - 50 1.6 2.0 0.5 3.0 150 - - - - 0.75 5.0 0.75 A mj s s s s V V V V pF Unit mA mA mA V V V Note 1. Pulsed: Pulse Duration 350s, Duty Factor = 2%. .485 (12.3) Dia .062 (1.57) .295 (7.5) .031 (0.78) Dia .960 (24.3) .580 (14.7) .360 (9.14) Min Base .147 (3.75) Dia (2 Places) .145 (3.7) R Max .200 (5.08) Collector/Case Emitter |
Price & Availability of NTE384
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |